On February 26, 2021, the Department of Electrical and Electronic Engineering (EEE) in collaboration with the IEEE BRACU Student Branch successfully organized a webinar on “From Traditional III-V HEMTs to III-Nitride HFETS: A Pathway to UWBG Transistors”. In the webinar main focus of discussion was on the trending growth and development of Semiconductor Technology and the transition from III-V HEMTs to III-Nitride HFETs leading to the innovation of Ultra-Wide-Band-Gap (UWBG) material. The webinar was hosted by Prof. Dr. AKM Abdul Malek Azad, founder and counselor of IEEE BRACU SBC. He gave a brief introduction of our speaker Dr Mehdi Anwar. The event was graced by our honourable Dean of the School of Engineering, Professor Arshad M. Chowdhury.
Our honourable speaker Dr Mehdi Anwar gave presentation on the developments of Semiconductor Technology, the different frequency bands and devices, the real-life application of semiconductor devices in the defense/military sector, the methods of technology developments, the transconductance of materials, the effective approach to improve the usefulness of Si materials, the Ultra-Wide Bandgap material, the Wide Bandgap III-Nitride HFET and so on. At the end, an interactive Question-Answer session took place between the speaker and faculties and students of EEE department.
Later on, Chair of IEEE SBC, Soptorsi Paul Shrestha, conveyed gratitude to the honourable speaker, Dr Mehdi Anwar, for sharing his insights on such an innovative topic and thanked Branch counselor, Prof. Dr. AKM Abdul Malek Azad and EEE department for giving such a great opportunity of learning by organizing this seminar.
Later, our honourable Dean of the School of Engineering, Professor Arshad M. Chowdhury, thanked Prof. Dr. AKM Abdul Malek Azad and our IEEE SB for arranging such an outstanding webinar and their excellent hard work. Further, he encouraged IEEE SB to organize more innovative and educational seminars and workshop in future.
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